5145427-5
TE Connectivity AMP Connectors
5145427-5
TE Connectivity AMP Connectors
CONN EDGE DUAL FMALE 240POS .050
Reference Price (USD)
1+
$65.34000
500+
$64.6866
1000+
$64.0332
1500+
$63.3798
2000+
$62.7264
2500+
$62.073
Exquisite packaging
Discount
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5145427-5
$65.34
Product details
TE Connectivity AMP Connectors's 5145427-5 delivers cutting-edge performance in Card Edge Connectors - Edgeboard Connectors for 5G infrastructure. Precision-engineered for RF signal integrity, this connector minimizes insertion loss while maximizing power handling capacity.The Non Specified - Dual Edge, Bi-Level compatible design features impedance-matched transitions. The graduated dielectric constant maintains <1.2 VSWR up to 40GHz.The Female configuration includes RF shielding continuity. Multi-finger gaskets provide 360 shielding with <2m contact resistance at grounding points.The 240 contact configuration supports massive MIMO arrays. Each contact path is individually tuned to maintain phase coherence across all channels.Compatible with 0.054" ~ 0.070" (1.37mm ~ 1.78mm) cards, the connector features constant-impedance transitions. The tapered contact design prevents impedance discontinuities at card entry points.The 2 row arrangement incorporates resonant suppression. Quarter-wave stubs integrated into the housing prevent cavity resonances in 24-30GHz bands.The 0.100" (2.54mm) pitch design enables millimeter-wave operation. Electromagnetic simulations verify <-30dB coupling between adjacent contacts at 60GHz.Dual readout capability supports beamforming calibration. Integrated test ports allow vector network analyzer measurements without disassembly.The Bi-Level - High Density, Board Lock package includes integrated RFI filters. These -network filters provide 40dB rejection of out-of-band signals from 1MHz to 6GHz.The Through Hole version includes thermal management features. The aluminum housing provides 5 C/W thermal resistance for power amplifier cooling.Solder process maintains RF performance. The solder joint geometry is optimized to minimize parasitic inductance (<0.5nH per contact).The Phosphor Bronze contacts exhibit excellent high-frequency characteristics. Skin effect resistance is 30% lower than standard alloys at 28GHz.Gold plating provides stable RF performance. Surface roughness is controlled to <0.2 m RMS to minimize conductor loss at microwave frequencies.With 30.0µin (0.76µm) gold plating, the contacts achieve <0.1dB insertion loss per contact at 40GHz. This specification meets 5G fronthaul requirements.The Brown housing incorporates RF-absorbent material. This carbon-loaded polymer reduces surface wave propagation by 15dB at 60GHz.
Product Attributes
- Product Status: Obsolete
- Card Type: Non Specified - Dual Edge, Bi-Level
- Gender: Female
- Number of Positions/Bay/Row: -
- Number of Positions: 240
- Card Thickness: 0.054" ~ 0.070" (1.37mm ~ 1.78mm)
- Number of Rows: 2
- Pitch: 0.100" (2.54mm)
- Read Out: Dual
- Features: Bi-Level - High Density, Board Lock
- Mounting Type: Through Hole
- Termination: Solder
- Contact Material: Phosphor Bronze
- Contact Finish: Gold
- Contact Finish Thickness: 30.0µin (0.76µm)
- Contact Type: -
- Color: Brown
- Flange Feature: -
- Operating Temperature: -
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