8080-1G24
TE Connectivity AMP Connectors
8080-1G24
TE Connectivity AMP Connectors
CONN SOCKET TRANSIST TO-3 3POS
Reference Price (USD)
1+
$16.33000
500+
$16.1667
1000+
$16.0034
1500+
$15.8401
2000+
$15.6768
2500+
$15.5135
Exquisite packaging
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8080-1G24
$16.33
Product details
Designed for mission-critical systems, 8080-1G24 by TE Connectivity AMP Connectors sets new standards in Sockets for ICs, Transistors technology. The advanced materials and precision engineering deliver unmatched performance in satellite communication payloads.The Transistor, TO-3 configuration supports multi-GHz signal transmission. Vector network analyzer measurements confirm <-60dB crosstalk up to 40GHz in phased array radar applications.The 3 (Round) layout enables efficient heat dissipation. Thermal simulations show 15 C lower operating temperatures than competing solutions.Featuring Tin-Lead finish, the socket maintains stable contact resistance. Testing under 95% RH conditions shows <2m variation over 1,000 hours.The 20.0µin (0.51µm) coating provides exceptional durability. Wear testing indicates <0.5 m material loss after 25,000 insertion cycles.Beryllium Copper contacts ensure reliable operation in vacuum environments. The material outgassing rate meets NASA ASTM E595 requirements.The Chassis Mount design simplifies maintenance in railway signaling systems. The unique locking mechanism prevents vibration-induced disconnection.With Closed Frame, the socket achieves EMI shielding effectiveness >60dB. This meets MIL-STD-461G requirements for sensitive military electronics.Solder method enables high-speed signal integrity. Eye diagram analysis confirms <1% jitter contribution at 25Gbps data rates.Tin-Lead plating prevents whisker growth in humid environments. This addresses JEDEC JESD22-A121 compliance requirements.The 20.0µin (0.51µm) finish ensures perfect solder joints. Cross-section analysis reveals 100% intermetallic coverage in reflow processes.The Beryllium Copper posts withstand repeated thermal cycling. Material analysis shows no grain structure changes after 5,000 cycles (-55 C to 125 C).Diallyl Phthalate (DAP) housing material offers exceptional chemical resistance. The material withstands immersion in hydraulic fluids and jet fuels.Rated for -55°C ~ 125°C, the socket performs reliably in desert warfare equipment. Testing confirms full functionality during rapid temperature transitions.
Product Attributes
- Product Status: Active
- Type: Transistor, TO-3
- Number of Positions or Pins (Grid): 3 (Round)
- Pitch - Mating: -
- Contact Finish - Mating: Tin-Lead
- Contact Finish Thickness - Mating: 20.0µin (0.51µm)
- Contact Material - Mating: Beryllium Copper
- Mounting Type: Chassis Mount
- Features: Closed Frame
- Termination: Solder
- Pitch - Post: -
- Contact Finish - Post: Tin-Lead
- Contact Finish Thickness - Post: 20.0µin (0.51µm)
- Contact Material - Post: Beryllium Copper
- Housing Material: Diallyl Phthalate (DAP)
- Operating Temperature: -55°C ~ 125°C
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