HSEC8-1100-01-S-DV-A-K

Samtec Inc.

General info

Part Number

Manufacturer

Samtec Inc.

Description:

CONN EDGE DUAL FMALE 200P 0.031

Datasheet:

HSEC8-1100-01-S-DV-A-K PDF

Reference Price (USD)

$15.66000

500+

$15.5034

1000+

$15.3468

1500+

$15.1902

2000+

$15.0336

2500+

$14.877

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

HSEC8-1100-01-S-DV-A-K

$15.66

Product details

The HSEC8-1100-01-S-DV-A-K from Samtec Inc. represents the pinnacle of Card Edge Connectors - Edgeboard Connectors technology for quantum computing. Precision-engineered for cryogenic operation, this connector maintains signal integrity at temperatures near absolute zero.Compatible with Non Specified - Dual Edge configurations, the design features superconducting contacts. When cooled below 4K, the contacts achieve zero DC resistance while maintaining 50 RF characteristics.The Female version includes thermal break technology. The graded transition from room temperature to cryogenic zones minimizes heat leak to <10 W per contact.With 100 contacts per bay, the layout optimizes quantum bus architecture. Each signal path is individually shielded to prevent qubit decoherence.The 200 contact array supports 128-qubit systems. The arrangement provides 40dB cross-talk isolation between adjacent control lines at 10GHz.Designed for 0.062" (1.57mm) superconducting boards, the connector features zero-thermal-expansion contacts. The Invar alloy construction maintains 0.1 m alignment from 300K to 4K.The 2 row configuration includes microwave filtering. Each signal line incorporates /4 stubs to suppress noise in the 5-8GHz qubit control band.The 0.031" (0.80mm) pitch design prevents parasitic coupling. Electromagnetic simulations confirm <-50dB nearest-neighbor interaction at 12GHz operating frequency.Dual capability enables quantum state measurement. The integrated parametric amplifiers provide 20dB gain with <0.5dB noise figure.The Board Guide, Locking Ramp package includes integrated qubit control. These on-connector bias tees provide DC/RF separation with >40dB isolation up to 20GHz.Surface Mount installation survives repeated thermal cycling. The differential contraction design prevents stress buildup during cooldown from 300K to 4K.The Solder process creates joint-less connections. The diffusion-bonded interfaces exhibit no Kapitza resistance at cryogenic temperatures.Beryllium Copper contacts maintain superconductivity. Critical current density exceeds 10MA/cm at 4K in 1T magnetic fields.The Gold surface treatment prevents oxidation. The atomically smooth finish (<0.5nm RMS) minimizes two-level system (TLS) noise in quantum circuits.With 30.0µin (0.76µm) plating, the contacts achieve <0.01dB insertion loss at 10GHz. This performance is maintained through 1000 thermal cycles.The Cantilever design includes non-invasive probing. The capacitive coupling provides 20fF contact with <1 m penetration depth on superconducting films.The Black housing incorporates RF-absorbent material. The carbon nanotube-loaded composite provides 30dB attenuation of stray microwave photons.Rated for -55°C ~ 125°C, the connector exhibits no outgassing below 10-9 torr. The ultra-high vacuum compatibility prevents qubit contamination.