MM908E625ACPEKR2

NXP USA Inc.'s MM908E625ACPEKR2 reimagines Embedded - Microcontrollers - Application Specific for smart grid and power conversion applications. This application-specific microcontroller integrates advanced PWM generation with high-resolution ADC capabilities, enabling precise control of power electronics.Optimized for Automotive Mirror Control implementations, the device features hardware-based overcurrent protection with 50ns response time. The integrated sigma-delta modulators enable direct sensorless motor control.The HC08 core includes dedicated trigonometric acceleration units. The parallel execution pipelines achieve 95% duty cycle accuracy at 100kHz switching frequencies.Supporting FLASH (16kB) options, the flash memory incorporates shadow registers for bumpless firmware updates. The dual-plane architecture allows live updates during continuous operation.As a member of the 908E family, this device shares power library functions with related products. The consistent API simplifies migration between power stages.The 512 x 8 memory implements deterministic access timing for control loops. The dual-port architecture allows simultaneous access from CPU and PWM units.With SCI, SPI connectivity, the device supports EtherCAT POWERLINK protocols. Each communication peripheral includes reinforced isolation meeting IEC 61800-5-1 standards.The 13 configurable ports feature 12-bit DAC outputs for analog control. Programmable dead-time insertion prevents shoot-through in bridge configurations.Operating from 8V ~ 18V inputs, the power architecture withstands 100V transients. The integrated gate drivers support SiC and GaN power devices.Certified for -40°C ~ 85°C operation, the package uses direct-bonded copper substrates. Thermal impedance is minimized for high-current applications.The Surface Mount option supports press-fit assembly for high-power PCBs. The package design accommodates thick copper layers for heat dissipation.Available in 54-SSOP (0.295", 7.50mm Width) Exposed Pad format, the package includes Kelvin sense connections. The low-inductance design minimizes switching losses at high di/dt rates.Supplied in 54-SOIC-EP configuration, each unit includes power cycling test reports. Production testing includes 100% burn-in at maximum junction temperature.