NQ0141100000G

Amphenol Anytek's NQ0141100000G represents a breakthrough in Terminal Blocks - Wire to Board technology, specifically developed for next-generation 5G infrastructure. This terminal block combines high-speed signal integrity with robust power delivery, making it perfect for RF equipment and base station applications. The 510KBA-BAAG's innovative design addresses EMI shielding requirements while maintaining exceptional contact reliability.The 1 architecture allows parallel signal routing with minimal crosstalk. Multi-level configurations incorporate shielding partitions that reduce electromagnetic interference by 30dB at GHz frequencies.Engineered with 1 contacts per tier, this solution supports high-density interconnections. Each position features gold-plated contacts for consistent impedance matching across RF signal paths.Horizontal with Board alignment facilitates optimal antenna feedline routing. The precision-angle design maintains 50 characteristic impedance throughout the connection path.Capable of handling 3 A load currents, the terminal block ensures uninterrupted power to RF amplifiers. Thermal simulations verify stable operation at 85 C ambient temperature with full load.The 150 V isolation rating meets stringent telecom safety standards. High-frequency dielectric materials minimize signal loss while providing arc flash protection.Supporting 22-26 AWG conductors, the termination system accommodates both solid and stranded RF cabling. The contact geometry prevents center conductor deformation during installation.Surface Mount configuration enhances grounding continuity for EMI control. Surface mount versions incorporate low-inductance grounding pads for effective noise suppression.The Screwless - Leg Spring, Push-In Spring technology ensures gas-tight connections for oxidation resistance. Automated insertion tools achieve <5m contact resistance variance across all terminated wires.Natural housing provides visual RF hazard identification while offering UV resistance. The material formulation exhibits <0.5% moisture absorption for stable dielectric properties.