NTE435P18
NTE Electronics, Inc
Product details
NTE Electronics, Inc's NTE435P18 enables next-generation Sockets for ICs, Transistors solutions for quantum computing applications. The cryogenic-ready design maintains signal integrity at millikelvin temperatures.The DIP, 0.3" (7.62mm) Row Spacing architecture provides ultra-low thermal conductivity. Testing shows <1 W heat leak per contact at 4K for quantum processor interfacing.With 18 (2 x 9), the socket supports complex qubit control. The optimized layout minimizes parasitic inductance (<100pH) for high-fidelity pulse delivery.0.100" (2.54mm) spacing prevents crosstalk in sensitive measurements. Testing shows <-80dB isolation at 10GHz for quantum state readout.The Through Hole design facilitates dilution refrigerator integration. Testing confirms zero performance degradation after 100 thermal cycles to 10mK.Incorporating Open Frame, the socket provides microwave shielding. Testing shows >60dB attenuation up to 40GHz for qubit protection.Solder technology ensures minimal thermal noise. Johnson noise measurements show <0.1nV/ Hz contribution at 4K.The 0.100" (2.54mm) spacing accommodates superconducting wiring. Critical current testing confirms >100mA per contact at 4.2K.
Product Attributes
- Product Status: Active
- Type: DIP, 0.3" (7.62mm) Row Spacing
- Number of Positions or Pins (Grid): 18 (2 x 9)
- Pitch - Mating: 0.100" (2.54mm)
- Contact Finish - Mating: -
- Contact Finish Thickness - Mating: -
- Contact Material - Mating: -
- Mounting Type: Through Hole
- Features: Open Frame
- Termination: Solder
- Pitch - Post: 0.100" (2.54mm)
- Contact Finish - Post: -
- Contact Finish Thickness - Post: -
- Contact Material - Post: -
- Housing Material: -
- Operating Temperature: -